Samsung Debuts Three Next-Gen Memory Technologies for AI Data Centers

Samsung has unveiled three next-generation memory technologies built for AI data centers — zHBM, zNAND-O, and BV-NAND — each targeting a different part of the AI memory stack. All three are built on advanced wafer-bonding techniques, with zHBM alone expected to enable up to 8x the performance of HBM5, aimed at easing the high-bandwidth memory shortages that have driven up AI server costs industry-wide.